蓝宝石晶片广泛应用于氮化物外延层（GaN、AlN、InN、AlGaN、InGaN、InAlN等）的生长和电子方面的应用。在这些应用中，蓝宝石晶片的表面粗糙度是影响其性能的关键因素之一。
我们以低成本为客户提供高表面质量的蓝宝石晶片。对于C面（0001）蓝宝石晶片，粗糙度可控制在小于0.2nm（AFM），特殊晶向（A-pane，R-plane、M-plane、N-plane、V-plane等）的粗糙度可控制在小于0.5nm（AFM）。
Specifications of 3英寸C面（0001）蓝宝石晶片
| Item | 3-inch C-plane(0001) 500μm Sapphire Wafers | |
| Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
| Grade | Prime, Epi-Ready | |
| Surface Orientation | C-plane(0001) | |
| C-plane off-angle toward M-axis 0.2 +/- 0.1° | ||
| Diameter | 76.2 mm +/- 0.1 mm | |
| Thickness | 500 μm +/- 25 μm | |
| Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
| Primary Flat Length | 22.0 mm +/- 1.0 mm | |
| Single Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| (SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
| Double Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| (DSP) | Back Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| TTV | < 15 μm | |
| BOW | < 15 μm | |
| WARP | < 15 μm | |
| Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
| 25 pieces in one cassette packaging or single piece packaging. | ||
注：可依据客户需求定制生产任意晶向、厚度的蓝宝石晶片。
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